ROHM Semiconductor GmbH Nch 40V 95A, HSMT8, Power MOSFET RH6G040BG

Description
RH6G040BG is a power MOSFET with low-on resistance and High power package, suitable for switching.
Description
RH6G040BG is a power MOSFET with low-on resistance and High power package, suitable for switching.
Datasheet
Datasheet Summary
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RH6G040BG is an N-channel 40V power MOSFET in an HSMT8 package designed for switching applications such as motor drives and DC/DC converters. It has a maximum continuous drain current of ±40 A at 25°C, a drain-source on-state resistance of 3.6 mΩ maximum at VGS=10 V and ID=40 A, and a power dissipation of 59 W. The device features a junction temperature range of -55°C to +150°C, is RoHS compliant, halogen-free, and has been 100% Rg and UIS tested. Thermal resistance from junction to case is 2.1 °C/W and junction to ambient is 62.5 °C/W when mounted on a 40×40×0.8 mm copper board.

Datasheet Summary
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RH6G040BG is an N-channel 40V power MOSFET in an HSMT8 package designed for switching applications such as motor drives and DC/DC converters. It has a maximum continuous drain current of ±40 A at 25°C, a drain-source on-state resistance of 3.6 mΩ maximum at VGS=10 V and ID=40 A, and a power dissipation of 59 W. The device features a junction temperature range of -55°C to +150°C, is RoHS compliant, halogen-free, and has been 100% Rg and UIS tested. Thermal resistance from junction to case is 2.1 °C/W and junction to ambient is 62.5 °C/W when mounted on a 40×40×0.8 mm copper board.

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Nch 40V 95A, HSMT8, Power MOSFET - RH6G040BG - ROHM Semiconductor GmbH
Willich, Germany
Nch 40V 95A, HSMT8, Power MOSFET
RH6G040BG
Nch 40V 95A, HSMT8, Power MOSFET RH6G040BG
RH6G040BG is a power MOSFET with low-on resistance and High power package, suitable for switching.

RH6G040BG is a power MOSFET with low-on resistance and High power package, suitable for switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RH6G040BG
Product Name Nch 40V 95A, HSMT8, Power MOSFET
Polarity N-Channel
V(BR)DSS 40 volts
IDSS 95000 milliamps
QG 12.5 nC
PD 59000 milliwatts
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