IGBT Trench Field Stop 650V 35A 72W Through Hole TO-3PFM
IGBT, 650V, 35A, 175DEG C, 72W; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:72W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
IGBT TRNCH FIELD 650V 35A TO3PFM
| DigiKey | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH00TK65GC11-ND | 687-RGTH00TK65GC11 | 10AH0545 | RGTH00TK65GC11 | RGTH00TK65GC11 |
| Product Name | Single IGBTs | IGBT | Igbt, 650V, 35A, 175Deg C, 72W; Dc Collector Current Rohm | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | |||
| Package Type | TO-3; TO-3PFM, SC-93-3 | TO-3 | |||
| Packing Method | Tube | Tube; Tube | |||
| Structure | Trench Field Stop |
