ROHM Semiconductor GmbH 5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDL, Field Stop Trench IGBT RGT8NL65D

Description
RGT8NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Datasheet
Description
RGT8NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Datasheet

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5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDL, Field Stop Trench IGBT - RGT8NL65D - ROHM Semiconductor GmbH
Willich, Germany
5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDL, Field Stop Trench IGBT
RGT8NL65D
5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDL, Field Stop Trench IGBT RGT8NL65D
RGT8NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.

RGT8NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number RGT8NL65D
Product Name 5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDL, Field Stop Trench IGBT
PD 65000 milliwatts
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