ROHM Semiconductor GmbH 5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDL, Field Stop Trench IGBT RGT8NL65D

RGT8NL65D is a 650 V, 4 A Field Stop Trench IGBT with a built-in fast recovery diode, designed for general inverter, UPS, power conditioner, and welder applications. It is packaged in a LPDL (TO-263L) case with a maximum power dissipation of 65 W at 25 °C and 32 W at 100 °C. The device has a collector-emitter saturation voltage of 1.65 V (typical) at 25 °C and 4 A, and supports a short circuit withstand time of 5 μs. It operates with a junction temperature range of -40 °C to +175 °C and meets RoHS compliance. The thermal resistance from junction to case is 2.30 °C/W for the IGBT and 8.70 °C/W for the diode.