The RGS50TSX2D is a 1200V, 25A field stop trench IGBT with a built-in fast recovery diode, designed for general inverters, UPS, PV inverters, and power conditioners. It is packaged in a TO-247N case and guaranteed to withstand a 10μs short circuit at 25°C junction temperature. The device has a collector-emitter saturation voltage of 1.70V (typical) at 25°C and 2.20V at 175°C, with a maximum power dissipation of 395W at 25°C and 197W at 100°C. Thermal resistance is 0.38°C/W from junction to case. It is RoHS compliant and meets AEC-Q200 qualification requirements.
The RGS50TSX2D is a 10μs SCSOA guaranteed IGBT, suitable for General Inverter, UPS, PV Inverter and Power Conditioner. The RGS series delivers low conduction loss that contributes to reducing size and to improving efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGS50TSX2D |
| Product Name | 10μs Short-Circuit Tolerance, 1200V 25A, FRD Built-in, Field Stop Trench IGBT |
| PD | 395000 milliwatts |
