RF4G100BG is an N-channel 40V, 10A power MOSFET in a HUML2020L8 package, designed for switching applications. It has a maximum on-resistance of 14.2 mΩ at 10V gate drive and 23.0 mΩ at 4.5V gate drive, with a power dissipation of 2.0 W. The device supports a continuous drain current of ±10 A and a pulsed drain current of ±40 A. Junction temperature ranges from -55°C to +150°C. It is RoHS compliant and halogen-free. Thermal resistance from junction to ambient is 62.5°C/W when mounted on a 40×40×0.8 mm copper board.
RF4G100BG is a power MOSFET with low on - resistance, suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RF4G100BG |
| Product Name | Nch 40V 10A, HUML2020L8, Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 40 volts |
| IDSS | 10000 milliamps |
| QG | 5 nC |
| PD | 2000 milliwatts |
