RF4G060AT is a P-channel MOSFET for switching and load switch applications, housed in a DFN2020-8S package measuring 2.0 mm × 2.0 mm. It has a drain-source voltage rating of -40 V, a continuous drain current of ±6.0 A, and a maximum on-resistance of 40 mΩ at -10 V gate-source voltage. The device dissipates up to 2.0 W and operates with a junction temperature range of -55 °C to +150 °C. It is RoHS compliant and halogen free, with a thermal resistance of 62.5 °C/W mounted on a 40×40×0.8 mm copper board. Avalanche energy is rated at 2.8 mJ for single pulse conditions.
RF4G060AT is a DFN package MOSFET suitable for switching and load switch applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RF4G060AT |
| Product Name | Pch -40V -6A Power, DFN2020, MOSFET |
| Polarity | P-Channel |
| V(BR)DSS | -40 volts |
| IDSS | -6000 milliamps |
| QG | 8.5 nC |
| PD | 2000 milliwatts |
