RF4E100AJ is an N-channel 30V MOSFET designed for switching applications such as DC/DC converters and battery switches, housed in the HUML2020L8 package measuring 2.0mm x 2.0mm. It features a maximum continuous drain current of ±10A, a drain-source on-resistance of up to 12.4mΩ at 4.5V gate voltage, and a power dissipation rating of 2.0W. The device is RoHS compliant, halogen free, and has been 100% Rg and UIS tested. It operates with a junction temperature range from -55°C to +150°C and meets thermal resistance of 62.5°C/W on a 40×40×0.8mm Cu board.
RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application.
RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RF4E100AJ | RF4E100AJ |
| Product Name | Nch 30V 10A Middle Power MOSFET | Nch 30V 10A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 10000 milliamps | 10000 milliamps |
| QG | 13 nC | 13 nC |
| PD | 2000 milliwatts | 2000 milliwatts |
