RF4E060AJ is an N-channel 30V, 6A middle power MOSFET designed for switching applications in a DFN2020-8S package. It has a maximum on-resistance of 37mΩ at 4.5V gate drive and 6A drain current, and can dissipate up to 2.0W with a junction temperature range of -55°C to +150°C. The device is RoHS compliant, halogen free, and rated for 100% Rg and UIS testing. Its thermal resistance junction-to-ambient is 62.5°C/W when mounted on a 40×40×0.8mm copper board.
RF4E060AJ is low on-resistance and high power small mold package MOSFET for switching application.
RF4E060AJ is low on-resistance and ｈigh power small mold package MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RF4E060AJ | RF4E060AJ |
| Product Name | Nch 30V 6A Middle Power MOSFET | Nch 30V 6A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 6000 milliamps | 6000 milliamps |
| QG | 4 nC | 4 nC |
| PD | 2000 milliwatts | 2000 milliwatts |
