The RF4C100BC is a P-channel MOSFET designed for switching applications, featuring a drain-source voltage rating of -20V and a continuous drain current of ±10A. It is packaged in the HUML2020L8 surface-mount case with a power dissipation rating of 2W and a maximum junction temperature of 150°C. The device has a maximum on-resistance of 15.6mΩ at -4.5V gate-source voltage and -10A drain current, and is RoHS compliant and halogen free. It supports a pulsed drain current of ±36A and has a single-pulse avalanche energy rating of 15.2mJ.
Discrete Semiconductors, MOSFETs, 12 to 150V MOSFETs, Single-Pch MOSFETs
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RF4C100BC | RF4C100BC |
| Product Name | Pch -20V -10A Middle Power MOSFET | Pch -20V -10A Middle Power MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -20 volts | -20 volts |
| IDSS | -10000 milliamps | -10000 milliamps |
| QG | 23.5 nC | 23.5 nC |
| PD | 2000 milliwatts | 2000 milliwatts |
