ROHM Semiconductor GmbH Nch 250V 4A Power MOSFET RD3U040CN

Description
RD3U040CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Description
RD3U040CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Datasheet
Datasheet Summary
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RD3U040CN is an N-channel 250V power MOSFET designed for switching applications such as switching power supplies. It is packaged in a DPAK (TO-252) case and has a maximum continuous drain current of ±4A at 25℃, with an on-resistance of up to 1300mΩ. The device supports a maximum power dissipation of 29W and operates with a junction temperature range of -55℃ to +150℃. It is RoHS compliant and features fast switching speed with low gate charge. The part includes an integrated body diode with a forward voltage of up to 1.5V and a reverse recovery time of 80ns.

Datasheet Summary
Powered by GS/AI

RD3U040CN is an N-channel 250V power MOSFET designed for switching applications such as switching power supplies. It is packaged in a DPAK (TO-252) case and has a maximum continuous drain current of ±4A at 25℃, with an on-resistance of up to 1300mΩ. The device supports a maximum power dissipation of 29W and operates with a junction temperature range of -55℃ to +150℃. It is RoHS compliant and features fast switching speed with low gate charge. The part includes an integrated body diode with a forward voltage of up to 1.5V and a reverse recovery time of 80ns.

Suppliers

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Nch 250V 4A Power MOSFET - RD3U040CN - ROHM Semiconductor GmbH
Willich, Germany
Nch 250V 4A Power MOSFET
RD3U040CN
Nch 250V 4A Power MOSFET RD3U040CN
RD3U040CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

RD3U040CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RD3U040CN
Product Name Nch 250V 4A Power MOSFET
Polarity N-Channel
V(BR)DSS 250 volts
IDSS 4000 milliamps
QG 8.5 nC
PD 29000 milliwatts
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