RD3T100CN is an N-channel 200V power MOSFET designed for switching applications, featuring a maximum continuous drain current of ±10A at 25°C and a maximum on-resistance of 182mΩ. It is packaged in a DPAK (TO-252) case with a power dissipation rating of 85W at 25°C and a junction temperature range of -55°C to +150°C. The device is RoHS compliant and features fast switching speed, low gate charge, and avalanche capability with a single-pulse energy of 7.35mJ. The body diode has a continuous forward current rating of 10A and a reverse recovery time of 85ns.
RD3T100CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RD3T100CN |
| Product Name | Nch 200V 10A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 200 volts |
| IDSS | 10000 milliamps |
| QG | 25 nC |
| PD | 85000 milliwatts |
