RD3S100CN is an N-channel 190V, 10A power MOSFET in a TO-252 package, designed for switching power supplies. It has a maximum on-resistance of 182mΩ at 25°C, a power dissipation of 85W, and a junction temperature range of -55°C to +150°C. The device is RoHS compliant and features fast switching speed with a total gate charge of 52nC. Thermal resistance from junction to case is 1.46°C/W and junction to ambient is 147°C/W. Avalanche current is rated at 5.0A and single-pulse avalanche energy at 8.33mJ.
RD3S100CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RD3S100CN |
| Product Name | Nch 190V 10A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 190 volts |
| IDSS | 10000 milliamps |
| QG | 52 nC |
| PD | 85000 milliwatts |
