ROHM Semiconductor GmbH Nch 190V 7.5A Power MOSFET RD3S075CN

RD3S075CN is an N-channel power MOSFET designed for switching applications, with a drain-source voltage rating of 190 V and a continuous drain current of ±7.5 A. It is packaged in a TO-252 case and features a maximum on-resistance of 336 mΩ at 25°C. The device supports a power dissipation of 52 W and operates with a junction temperature range of -55°C to +150°C. It is RoHS compliant and features fast switching speed, low gate charge, and easy parallel operation. Thermal resistance from junction to case is 2.36°C/W, and junction-to-ambient is 147°C/W. The gate-source voltage rating is ±20 V, and the device includes a built-in body diode with a reverse recovery time of 70 ns and charge of 180 nC.