ROHM Semiconductor GmbH Nch 100V 20A Power MOSFET RD3P200SN

Description
RD3P200SN is a Power MOSFET with Low on - resistance., suitable for Switching.
Description
RD3P200SN is a Power MOSFET with Low on - resistance., suitable for Switching.
Datasheet
Datasheet Summary
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RD3P200SN is an N-channel 100 V, 20 A power MOSFET in a DPAK (TO-252) package, designed for switching applications. It has a maximum on-resistance of 46 mΩ at 10 V gate drive and 20 A drain current, with a power dissipation rating of 20 W. The device supports a continuous drain current of ±20 A and a pulsed drain current of ±80 A, with an avalanche energy rating of 72 mJ. Junction temperature ranges from -55°C to 150°C. It is RoHS compliant and features low gate charge, fast switching, and parallel operation capability.

Datasheet Summary
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RD3P200SN is an N-channel 100 V, 20 A power MOSFET in a DPAK (TO-252) package, designed for switching applications. It has a maximum on-resistance of 46 mΩ at 10 V gate drive and 20 A drain current, with a power dissipation rating of 20 W. The device supports a continuous drain current of ±20 A and a pulsed drain current of ±80 A, with an avalanche energy rating of 72 mJ. Junction temperature ranges from -55°C to 150°C. It is RoHS compliant and features low gate charge, fast switching, and parallel operation capability.

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Nch 100V 20A Power MOSFET - RD3P200SN - ROHM Semiconductor GmbH
Willich, Germany
Nch 100V 20A Power MOSFET
RD3P200SN
Nch 100V 20A Power MOSFET RD3P200SN
RD3P200SN is a Power MOSFET with Low on - resistance., suitable for Switching.

RD3P200SN is a Power MOSFET with Low on - resistance., suitable for Switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RD3P200SN
Product Name Nch 100V 20A Power MOSFET
Polarity N-Channel
V(BR)DSS 100 volts
IDSS 20000 milliamps
QG 55 nC
PD 20000 milliwatts
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