RD3P08BBD is an N-channel 100V 80A power MOSFET in a DPAK (TO-252) package, designed for high-current switching applications. It has a maximum drain-source on-state resistance of 11.6mΩ at VGS=10V and ID=80A, with a continuous drain current rating of ±80A and power dissipation of 119W. The device is RoHS compliant, halogen-free, and features 100% Rg and UIS testing. Thermal resistance from junction to case is 1.05°C/W. Operating junction and storage temperature range is -55°C to +150°C.
RD3P08BBD is a power MOSFET with low on - resistance, suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RD3P08BBD |
| Product Name | Nch 100V 80A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 100 volts |
| IDSS | 80000 milliamps |
| QG | 22.5 nC |
| PD | 119000 milliwatts |
