ROHM Semiconductor GmbH Nch 60V 8A Power MOSFET RD3L080SN

Description
RD3L080SN is a Power MOSFET with Low on - resistance., suitable for Switching.
Description
RD3L080SN is a Power MOSFET with Low on - resistance., suitable for Switching.
Datasheet
Datasheet Summary
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The RD3L080SN is an N-channel 60V 8A power MOSFET in a DPAK (TO-252) package, designed for switching applications. It has a maximum on-resistance of 80mΩ at 10V gate-source voltage and 15W power dissipation. The device supports a pulsed drain current of ±16A and operates with a junction temperature range of -55°C to +150°C. It is RoHS compliant and features low on-resistance, fast switching speed, and easy parallel operation. Thermal resistance from junction to case is 8.33°C/W.

Datasheet Summary
Powered by GS/AI

The RD3L080SN is an N-channel 60V 8A power MOSFET in a DPAK (TO-252) package, designed for switching applications. It has a maximum on-resistance of 80mΩ at 10V gate-source voltage and 15W power dissipation. The device supports a pulsed drain current of ±16A and operates with a junction temperature range of -55°C to +150°C. It is RoHS compliant and features low on-resistance, fast switching speed, and easy parallel operation. Thermal resistance from junction to case is 8.33°C/W.

Suppliers

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Nch 60V 8A Power MOSFET - RD3L080SN - ROHM Semiconductor GmbH
Willich, Germany
Nch 60V 8A Power MOSFET
RD3L080SN
Nch 60V 8A Power MOSFET RD3L080SN
RD3L080SN is a Power MOSFET with Low on - resistance., suitable for Switching.

RD3L080SN is a Power MOSFET with Low on - resistance., suitable for Switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RD3L080SN
Product Name Nch 60V 8A Power MOSFET
Polarity N-Channel
V(BR)DSS 60 volts
IDSS 8000 milliamps
QG 9.4 nC
PD 15000 milliwatts
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