ROHM Semiconductor GmbH Nch 60V 115A, TO-252, Power MOSFET RD3L07BBG

Description
RD3L07BBG is a power MOSFET with low on - resistance, suitable for switching.
Description
RD3L07BBG is a power MOSFET with low on - resistance, suitable for switching.
Datasheet
Datasheet Summary
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RD3L07BBG is a 60V N-channel power MOSFET in a DPAK (TO-252) package, designed for high-current switching applications. It has a maximum continuous drain current of 70A at 25°C, a pulsed drain current of 460A, and a maximum on-resistance of 3.9mΩ at 10V gate voltage. The device supports a power dissipation of 102W and has a thermal resistance junction-to-case of 1.22°C/W. It is RoHS compliant and halogen free, with an operating junction temperature range of -55°C to +150°C.

Datasheet Summary
Powered by GS/AI

RD3L07BBG is a 60V N-channel power MOSFET in a DPAK (TO-252) package, designed for high-current switching applications. It has a maximum continuous drain current of 70A at 25°C, a pulsed drain current of 460A, and a maximum on-resistance of 3.9mΩ at 10V gate voltage. The device supports a power dissipation of 102W and has a thermal resistance junction-to-case of 1.22°C/W. It is RoHS compliant and halogen free, with an operating junction temperature range of -55°C to +150°C.

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Nch 60V 115A, TO-252, Power MOSFET - RD3L07BBG - ROHM Semiconductor GmbH
Willich, Germany
Nch 60V 115A, TO-252, Power MOSFET
RD3L07BBG
Nch 60V 115A, TO-252, Power MOSFET RD3L07BBG
RD3L07BBG is a power MOSFET with low on - resistance, suitable for switching.

RD3L07BBG is a power MOSFET with low on - resistance, suitable for switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RD3L07BBG
Product Name Nch 60V 115A, TO-252, Power MOSFET
Polarity N-Channel
V(BR)DSS 60 volts
IDSS 115000 milliamps
QG 23 nC
PD 102000 milliwatts
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