ROHM Semiconductor GmbH Pch -60V -10A Power MOSFET RD3L01BAT

RD3L01BAT is a P-channel power MOSFET designed for switching applications, rated at -60 V drain-source voltage and ±10 A continuous drain current. It is packaged in a DPAK (TO-252) case with a maximum power dissipation of 26 W and a junction temperature range of -55 °C to +150 °C. The on-resistance is specified at a maximum of 84 mΩ at -10 V gate-source voltage and -10 A drain current. The device is RoHS compliant and features fast switching speed with a total gate charge of 15.2 nC at -30 V drain-source voltage. Thermal resistance from junction to case is 4.9 °C/W.