ROHM Semiconductor GmbH Nch 45V 20A Power MOSFET RD3H200SN

RD3H200SN is an N-channel 45V power MOSFET designed for switching applications, housed in a DPAK (TO-252) package. It has a maximum continuous drain current of ±20A, a drain-source on-state resistance of up to 28mΩ at 10V gate voltage, and a power dissipation rating of 20W. The device features low gate charge, fast switching, and is RoHS compliant with Pb-free lead plating. The junction temperature operating range is -55°C to +150°C, and it meets the IEC 60286-3 standard for tape and reel packaging with a 2500-piece reel size. Thermal resistance from junction to case is 6.25°C/W maximum.