ROHM Semiconductor GmbH Pch -45V -16A Power MOSFET RD3H160SP

RD3H160SP is a P-channel power MOSFET designed for switching applications. It is packaged in a DPAK (TO-252) case and rated for a drain-source voltage of -45 V, with a continuous drain current of ±16 A and a maximum power dissipation of 20 W. The maximum on-state resistance is 50 mΩ at -10 V gate-source voltage and -16 A drain current. The device meets RoHS compliance with lead-free plating. Its junction temperature range is -55°C to +150°C, and thermal resistance from junction to case is 6.25°C/W. The device is supplied in tape and reel packaging with a reel size of 330 mm and a basic ordering unit of 2500 pieces.