RD3H080SP is a P-channel power MOSFET designed for switching applications, housed in a DPAK (TO-252) package. It has a drain-source voltage rating of -45 V, a continuous drain current of ±8 A, and a maximum power dissipation of 15 W. The maximum on-state resistance is 91 mΩ at -10 V gate-source voltage and -8 A drain current, with a junction temperature range of -55 °C to +150 °C. The device is RoHS compliant and features low on-resistance, fast switching, and easy parallel operation. Thermal resistance from junction to case is 8.33 °C/W.
RD3H080SP is a Power MOSFET with Low on - resistance., suitable for Switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RD3H080SP |
| Product Name | Pch -45V -8A Power MOSFET |
| Polarity | P-Channel |
| V(BR)DSS | -45 volts |
| IDSS | -8000 milliamps |
| QG | 9 nC |
| PD | 15000 milliwatts |
