ROHM Semiconductor GmbH Nch 40V 50A Power MOSFET RD3G500GN

The RD3G500GN is an N-channel power MOSFET with a maximum drain-source voltage (V_DSS) of 40V and a continuous drain current (I_D) rating of ¬±50A. It features a low on-resistance of 4.9mOc at a gate-source voltage (V_GS) of 10V, making it suitable for efficient switching applications. The device is housed in a TO-252 package and has a power dissipation capability of 35W. It is RoHS compliant, halogen-free, and utilizes Pb-free lead plating. The MOSFET also supports pulsed drain currents up to ¬±100A and has a maximum junction temperature of 150¬8C. With a thermal resistance of 3.5¬8C/W from junction to case, it is designed for reliable performance in various applications.