ROHM Semiconductor GmbH Pch -40V -70A Power MOSFET RD3G07BAT

RD3G07BAT is a P-channel power MOSFET designed for switching applications, housed in a DPAK (TO-252) package. It has a drain-source voltage rating of -40V and a continuous drain current of ±70A, with a maximum on-resistance of 7.1mΩ at -10V gate-source voltage and -70A drain current. The device supports a peak pulsed drain current of ±140A, an avalanche current of -35A, and dissipates up to 101W. It operates within a junction temperature range of -55°C to +150°C, features RoHS compliance, and has a thermal resistance from junction to case of 1.23°C/W.