ROHM Semiconductor GmbH Pch -40V -35A Power MOSFET RD3G03BAT

RD3G03BAT is a P-channel power MOSFET designed for switching applications, featuring a drain-source voltage rating of -40V and a continuous drain current of ±35A. It is packaged in a DPAK (TO-252) case with a maximum power dissipation of 56W and a junction temperature range of -55°C to +150°C. The device has a maximum on-resistance of 19.1mΩ at -10V gate-source voltage and -35A drain current, and it is RoHS compliant. Thermal resistance from junction to case is 2.22°C/W. The part includes avalanche protection with a single-pulse energy rating of 40mJ and meets AEC-Q200 standards for automotive reliability.