ROHM Semiconductor GmbH Pch -40V -15A Power MOSFET RD3G01BAT

RD3G01BAT is a P-channel power MOSFET designed for switching applications, housed in a DPAK (TO-252) package. It has a drain-source voltage rating of -40 V, a continuous drain current of ±15 A, and a maximum power dissipation of 25 W. The on-resistance is specified at a maximum of 39 mΩ at -10 V gate-source voltage and -15 A drain current. The device operates over a junction temperature range of -55°C to +150°C and is RoHS compliant. Thermal resistance from junction to case is 4.9°C/W. The device supports avalanche operation with a single-pulse energy rating of 18 mJ.