RCJ331N25 is an N-channel 250V power MOSFET designed for switching applications, housed in a TO-263S package. It has a continuous drain current of 33A at 25°C and a maximum drain-source on-resistance of 105mΩ at 16.5A and 25°C. The device supports a pulse drain current of 132A and is rated for 211W power dissipation at 25°C. Junction temperature ranges from -55°C to +150°C. The part is RoHS compliant, 100% avalanche tested, and has a gate-source voltage rating of ±30V. Thermal resistance from junction to case is 0.59°C/W, and junction-to-ambient is 80°C/W when mounted on an FR4 PCB. It meets AEC-Q200 qualification standards.
RCJ331N25 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RCJ331N25 |
| Product Name | 250V 33A, Nch, TO-263S, Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 250 volts |
| IDSS | 33000 milliamps |
| QG | 80 nC |
| PD | 211000 milliwatts |
