RCJ081N20 is an N-channel 200V power MOSFET designed for switching power supplies and automotive motor and solenoid drives. It comes in an SC-83 package with a maximum power dissipation of 40W and a junction temperature range of -55°C to 150°C. The device has a maximum on-resistance of 770mΩ at 10V gate-source voltage and 4.0A drain current, and is rated for continuous drain current of 8.0A at 25°C. It is RoHS compliant, 100% avalanche tested, and features a body diode with a forward voltage of up to 1.5V at 8.0A. Thermal resistance from junction to case is 3.125°C/W, and to ambient is 80°C/W when mounted on a standard FR4 PCB.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RCJ081N20 | RCJ081N20 |
| Product Name | Nch 200V 8A Power MOSFET | 10V Drive Nch Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 200 volts | 200 volts |
| IDSS | 8000 milliamps | 8000 milliamps |
| QG | 9 nC | 9 nC |
| PD | 40000 milliwatts | 40000 milliwatts |
