ROHM Semiconductor GmbH Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD RBLQ10RSM10

The RBLQ10RSM10 is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications. A miniaturized, thin and wireless TO-277 package.