The R8011KNX is an N-channel 800V Power MOSFET designed for high-speed switching applications. It is packaged in a TO-220FM case and has a maximum continuous drain current of 11A and a power dissipation of 65W. The device has a maximum on-resistance of 0.45Ω at 10V gate-source voltage and 5.5A drain current. It supports gate-source voltage up to ±20V and has a junction temperature range of -55°C to +150°C. The MOSFET is RoHS compliant with Pb-free lead plating. Thermal resistance from junction to case is 1.9°C/W, and junction-to-ambient is 75°C/W.
The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R8011KNX |
| Product Name | High-speed Switching Nch 800V 11A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 800 volts |
| IDSS | 11000 milliamps |
| QG | 37 nC |
| PD | 65000 milliwatts |
