The R8009KNX is an N-channel 800V, 9A Power MOSFET in a TO-220FM package, designed for high-speed switching applications. It has a maximum drain-source on-state resistance of 0.6Ω at 10V gate-source voltage and 4.5A drain current, with a power dissipation rating of 59W. The device supports a continuous drain current of ±9A and a pulsed drain current of ±27A, with an avalanche energy rating of 171mJ. It features a junction temperature range of -55°C to +150°C and is RoHS compliant. The thermal resistance from junction to case is 2.1°C/W and junction to ambient is 75°C/W.
The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R8009KNX |
| Product Name | High-speed Switching Nch 800V 9A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 800 volts |
| IDSS | 9000 milliamps |
| QG | 27 nC |
| PD | 59000 milliwatts |
