ROHM Semiconductor GmbH Nch 800V 8A Power MOSFET R8008ANJ

Description
R8008ANJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Description
R8008ANJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Datasheet
Datasheet Summary
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R8008ANJ is an N-channel 800V 8A power MOSFET in a TO-263S package, designed for switching power supplies. It has a maximum on-resistance of 1.03Ω at 25°C, a gate-source voltage rating of ±30V, and a power dissipation of 195W. The device is RoHS compliant and features fast switching speed, low on-resistance, and easy parallel operation. Thermal resistance from junction to case is 0.64°C/W, and the operating junction and storage temperature range is -55°C to +150°C.

Datasheet Summary
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R8008ANJ is an N-channel 800V 8A power MOSFET in a TO-263S package, designed for switching power supplies. It has a maximum on-resistance of 1.03Ω at 25°C, a gate-source voltage rating of ±30V, and a power dissipation of 195W. The device is RoHS compliant and features fast switching speed, low on-resistance, and easy parallel operation. Thermal resistance from junction to case is 0.64°C/W, and the operating junction and storage temperature range is -55°C to +150°C.

Suppliers

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Nch 800V 8A Power MOSFET - R8008ANJ - ROHM Semiconductor GmbH
Willich, Germany
Nch 800V 8A Power MOSFET
R8008ANJ
Nch 800V 8A Power MOSFET R8008ANJ
R8008ANJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

R8008ANJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number R8008ANJ
Product Name Nch 800V 8A Power MOSFET
Polarity N-Channel
V(BR)DSS 800 volts
IDSS 8000 milliamps
QG 38 nC
PD 195000 milliwatts
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