The R8006KNX is an N-channel 800V 6A power MOSFET designed for switching applications. It is packaged in a TO-220FM case and has a maximum power dissipation of 52 W. The device features a maximum on-resistance of 0.90 Ω at 10 V gate-source voltage and 3 A drain current, with a continuous drain current rating of ±6 A and an avalanche energy rating of 76 mJ. The gate threshold voltage ranges from 2.5 V to 4.5 V, and the junction temperature operates from -55°C to +150°C. The MOSFET is RoHS compliant and features Pb-free plating.
The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R8006KNX |
| Product Name | High-speed Switching Nch 800V 6A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 800 volts |
| IDSS | 6000 milliamps |
| QG | 22 nC |
| PD | 52000 milliwatts |
