The R8006KND3 is an N-channel 800V 6A power MOSFET designed for switching applications, housed in a TO-252 package. It has a maximum on-resistance of 0.90Ω at 10V gate-source voltage and 3A drain current, with a continuous drain current rating of ±6A and power dissipation of 83W at 25°C junction temperature. The device supports avalanche energy up to 76mJ, operates from -55°C to 150°C, and is RoHS compliant. Thermal resistance from junction to case is 1.5°C/W, and junction-to-ambient is 147°C/W.
The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R8006KND3 |
| Product Name | High-speed Switching Nch 800V 6A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 800 volts |
| IDSS | 6000 milliamps |
| QG | 22 nC |
| PD | 83000 milliwatts |
