The R8003KND3 is an N-channel 800V 3A Power MOSFET in a TO-252 package, designed for high-speed switching applications. It has a maximum drain-source on-state resistance of 1.8 Ω at 10V gate-source voltage and 1.5A drain current, and can dissipate up to 48W at 25°C case temperature. The device supports a continuous drain current of ±3A and a pulsed drain current of ±9A, with a maximum junction temperature of 150°C. Thermal resistance from junction to case is 2.6°C/W, and junction-to-ambient is 147°C/W. It is RoHS compliant and features low on-resistance, fast switching, and easy parallel operation. The device is rated for a gate-source voltage of ±20V DC and has single-pulse avalanche energy of 19 mJ.
The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R8003KND3 |
| Product Name | High-speed Switching Nch 800V 3A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 800 volts |
| IDSS | 3000 milliamps |
| QG | 11.5 nC |
| PD | 48000 milliwatts |
