The R8002KNX is an N-channel 800V power MOSFET in a TO-220FM package, designed for switching applications. It has a continuous drain current rating of ±1.6A and a maximum on-resistance of 4.2Ω at 10V gate-source voltage. The device dissipates up to 28W and operates with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 4.4°C/W and junction to ambient is 75°C/W. It is RoHS compliant and features low on-resistance, fast switching, and easy parallel operation. The gate threshold voltage ranges from 2.5V to 4.5V, and the device includes a body diode with a reverse recovery time of 180ns. Avalanche energy capability is 4mJ.
The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R8002KNX |
| Product Name | 800V 1.6A, TO-220FM, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 800 volts |
| IDSS | 1600 milliamps |
| QG | 7.5 nC |
| PD | 28000 milliwatts |
