ROHM Semiconductor GmbH 650V 76A TO-247, Low-noise Power MOSFET R6576ENZ4

R6576ENZ4 is a N-channel 650V power MOSFET designed for switching applications, housed in a TO-247 package. It has a maximum continuous drain current of 76A and a maximum on-resistance of 0.046Ω at 25°C. The device supports a peak pulsed drain current of 228A and can dissipate up to 735W with a junction temperature range of -55°C to +150°C. It is RoHS compliant and features low on-resistance, fast switching, and ease of parallel operation. Thermal resistance from junction to case is 0.17°C/W, and junction-to-ambient is 30°C/W. The gate threshold voltage is 2.0V to 4.0V, with a total gate charge of 260nC. Avalanche energy rating is 2115mJ, and the body diode has a reverse recovery time of 990ns at 76A.