ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6535ENZC8

N-channel 650V 35A power MOSFET in a TO-3PF package with a maximum power dissipation of 102W, a drain-source on-state resistance of up to 0.115Ω at 25°C, and RoHS compliance. It features a junction temperature range of -55°C to +150°C, thermal resistance junction-to-case of 1.25°C/W, and is suited for switching applications with fast switching characteristics and parallel use capability.