The R6535ENZ4 is a N-channel 650V 35A power MOSFET in a TO-247G package, designed for switching applications. It has a maximum drain-source on-state resistance of 0.115Ω at 25°C and can dissipate up to 379W. The device is RoHS compliant and features fast switching and easy parallel operation. Its junction temperature range is from -55°C to +150°C, with a thermal resistance from junction to case of 0.33°C/W and junction to ambient of 30°C/W. The gate-source voltage is rated at ±20V static and ±30V AC, with a gate threshold voltage between 2.0V and 4.0V. Avalanche energy rating is 867mJ single pulse. The device meets RoHS requirements and is packaged in a tube with 600 pcs per unit.
The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6535ENZ4 |
| Product Name | 650V 35A TO-247, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 35000 milliamps |
| QG | 110 nC |
| PD | 379000 milliwatts |
