ROHM Semiconductor GmbH 650V 35A TO-3PF, Low-noise Power MOSFET R6535ENZ

The R6535ENZ is an N-channel 650V power MOSFET in a TO-3PF package, designed for switching applications. It has a continuous drain current rating of ±35A and a maximum on-resistance of 0.115Ω at 25°C. The device supports a power dissipation of 102W and operates with a junction temperature range of -55°C to +150°C. It features low on-resistance, fast switching speed, and is RoHS compliant. Thermal resistance from junction to case is up to 1.25°C/W, and junction-to-ambient is up to 40°C/W. The gate threshold voltage ranges from 2.0V to 4.0V, and the device includes an integrated body diode with a reverse recovery time of 720ns. The part is supplied in a tube packaging with 300 pieces per tube.