The R6530KNZ4 is a N-channel 650V 30A power MOSFET in a TO-247G package, designed for high-speed switching applications. It has a maximum drain-source on-state resistance of 0.140Ω at 25°C and can dissipate up to 305W. The device supports a continuous drain current of ±30A and a pulsed drain current of ±90A, with an avalanche energy rating of 730mJ. It is RoHS compliant and operates within a junction temperature range of -55°C to +150°C. The thermal resistance from junction to case is 0.41°C/W and junction to ambient is 30°C/W.
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6530KNZ4 |
| Product Name | 650V 30A TO-247, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 30000 milliamps |
| QG | 56 nC |
| PD | 305000 milliwatts |
