The R6530KNZ is an N-channel 650V 30A power MOSFET in a TO-3PF package, designed for high-speed switching applications. It has a maximum drain-source on-state resistance of 0.140Ω at 25°C and can handle a continuous drain current of ±30A. The device supports a peak pulsed drain current of ±90A and dissipates up to 86W with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 1.5°C/W and junction to ambient is 40°C/W. It is RoHS compliant and features low on-resistance, ultra-fast switching, and ease of parallel operation. The gate threshold voltage ranges from 3.0V to 5.0V, and the total gate charge is 56nC. Avalanche energy is rated at 730mJ with a single-pulse avalanche current of 5.2A.
R6530KNZ is a power MOSFET with low-on resistance and ultra fast switching speed, suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6530KNZ |
| Product Name | 650V 30A TO-3PF, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 30000 milliamps |
| QG | 56 nC |
| PD | 86000 milliwatts |
