The R6530KNX3 is a N-channel 650V 30A power MOSFET in a TO-220AB package, designed for high-speed switching applications. It has a maximum drain-source on-resistance of 0.140Ω at 25°C and can handle a pulsed drain current of ±90A. The device supports a power dissipation of 307W at 25°C with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 0.41°C/W and junction to ambient is 80°C/W. It is RoHS compliant and features low on-resistance, ultra-fast switching, and easy parallel operation. The gate plateau voltage is 6.6V and total gate charge is 56nC at 300V drain voltage. Avalanche energy rating is 730mJ at 25°C.
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6530KNX3 |
| Product Name | 650V 30A, TO-220AB, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 30000 milliamps |
| QG | 56 nC |
| PD | 307000 milliwatts |
