ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6530ENZC8

Description
N-Channel 650V 30A (Tc) 86W (Tc) Through Hole TO-3PF
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Description
N-Channel 650V 30A (Tc) 86W (Tc) Through Hole TO-3PF
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Datasheet
Datasheet Summary
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N-channel 650V 30A power MOSFET in a TO-3PF package, rated for 86W power dissipation, with a maximum on-resistance of 0.140Ω at 25°C, and RoHS compliant. The device supports avalanche energy up to 730 mJ and operates from -55°C to 150°C junction temperature.

Datasheet Summary
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N-channel 650V 30A power MOSFET in a TO-3PF package, rated for 86W power dissipation, with a maximum on-resistance of 0.140Ω at 25°C, and RoHS compliant. The device supports avalanche energy up to 730 mJ and operates from -55°C to 150°C junction temperature.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 846-R6530ENZC8-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-R6530ENZC8-ND
Single FETs, MOSFETs 846-R6530ENZC8-ND
N-Channel 650V 30A (Tc) 86W (Tc) Through Hole TO-3PF

N-Channel 650V 30A (Tc) 86W (Tc) Through Hole TO-3PF

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 846-R6530ENZC8-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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