Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz.
The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
| Qorvo | |
|---|---|
| Product Category | RF Transistors |
| Product Number | TGF2952 |
| Product Name | DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT |
| Transistor Technology / Material | GaN on SiC |
