The R6530ENZ4 is an N-channel 650V 30A power MOSFET in a TO-247 package, designed for switching applications with low on-resistance and fast switching characteristics. It has a maximum drain-source voltage of 650V, continuous drain current of ±30A, and power dissipation of 305W at 25°C. The on-resistance is 0.140Ω maximum at 25°C, with a junction temperature range of -55°C to +150°C. The device is RoHS compliant and features a thermal resistance from junction to case of 0.41°C/W. It includes a body diode with reverse recovery time of 640ns and is qualified for pulse operation under defined test conditions.
The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6530ENZ4 |
| Product Name | 650V 30A TO-247, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 30000 milliamps |
| QG | 90 nC |
| PD | 305000 milliwatts |
