R6530ENX is an N-channel 650V 30A power MOSFET in a TO-220FM package, designed for switching applications. It has a maximum on-resistance of 0.140Ω at 25°C and handles a continuous drain current of ±30A. The device supports a peak pulsed drain current of ±90A and an avalanche energy of 730mJ. Thermal resistance from junction to case is 1.5°C/W, and junction temperature ranges from -55°C to +150°C. It is RoHS compliant and features low gate charge and fast switching performance. The body diode has a reverse recovery time of 640ns and peak reverse current of 40A.
R6530ENX is a power MOSFET with low-on resistance and fast switching speed, suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6530ENX |
| Product Name | 650V 30A TO-220FM, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 30000 milliamps |
| QG | 90 nC |
| PD | 86000 milliwatts |
