The R6524KNX3 is a high-speed switching N-channel Power MOSFET with a maximum drain-source voltage (V_DSS) of 650V and a continuous drain current (I_D) rating of ±24A. It features a low on-resistance of 0.185Ω, which contributes to its efficiency in power applications. The device is housed in a TO-220AB package and has a power dissipation capability of 253W. This MOSFET is designed for applications requiring fast switching speeds, making it suitable for use in power factor correction (PFC) and LLC circuits. It is RoHS compliant and features Pb-free plating. The device can handle pulsed drain currents up to ±72A and has a maximum junction temperature of 150°C. Thermal resistance from junction to case is rated at 0.49°C/W, and from junction to ambient at 80°C/W. The R6524KNX3 also has a gate threshold voltage range of 3V to 5V and a total gate charge of 45nC, indicating its suitability for high-frequency applications.
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6524KNX3 |
| Product Name | 650V 24A, TO-220AB, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 24000 milliamps |
| QG | 45 nC |
| PD | 253000 milliwatts |
