ROHM Semiconductor GmbH 650V 20A TO-3PF, Low-noise Power MOSFET R6520ENZ

Description
R6520ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.
Description
R6520ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.
Datasheet
Datasheet Summary
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R6520ENZ is an N-channel 650V, 20A power MOSFET in a TO-3PF package, designed for switching applications. It has a maximum on-resistance of 0.205Ω at 25°C and supports a continuous drain current of ±20A with a power dissipation of 68W. The device features fast switching speed and is RoHS compliant. Thermal resistance from junction to case is up to 1.04°C/W, and junction temperature ranges from -55°C to +150°C. The gate threshold voltage is 2V to 4V, and it includes a body diode with a reverse recovery time of 500ns.

Datasheet Summary
Powered by GS/AI

R6520ENZ is an N-channel 650V, 20A power MOSFET in a TO-3PF package, designed for switching applications. It has a maximum on-resistance of 0.205Ω at 25°C and supports a continuous drain current of ±20A with a power dissipation of 68W. The device features fast switching speed and is RoHS compliant. Thermal resistance from junction to case is up to 1.04°C/W, and junction temperature ranges from -55°C to +150°C. The gate threshold voltage is 2V to 4V, and it includes a body diode with a reverse recovery time of 500ns.

Suppliers

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Supplier Links
650V 20A TO-3PF, Low-noise Power MOSFET - R6520ENZ - ROHM Semiconductor GmbH
Willich, Germany
650V 20A TO-3PF, Low-noise Power MOSFET
R6520ENZ
650V 20A TO-3PF, Low-noise Power MOSFET R6520ENZ
R6520ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.

R6520ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number R6520ENZ
Product Name 650V 20A TO-3PF, Low-noise Power MOSFET
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 20000 milliamps
QG 61 nC
PD 68000 milliwatts
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