The R6520ENJ is an N-channel 650V 20A power MOSFET in a TO-263 package, designed for switching applications. It has a maximum on-resistance of 0.205Ω at 25°C, a continuous drain current of ±20A, and a power dissipation of 231W. The device supports avalanche energy up to 444mJ and operates within a junction temperature range of -55°C to +150°C. It is RoHS compliant and features low on-resistance, fast switching, and easy parallel use. Thermal resistance from junction to case is 0.54°C/W, and junction-to-ambient is 80°C/W when mounted on an FR4 PCB. The gate threshold voltage ranges from 2V to 4V, and total gate charge is 61nC.
R6520ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6520ENJ |
| Product Name | 650V 20A TO-263, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 20000 milliamps |
| QG | 61 nC |
| PD | 231000 milliwatts |
