The R6511KNX is an N-channel 650V power MOSFET in a TO-220FM package, designed for high-speed switching applications. It has a maximum continuous drain current of ±11A and a maximum on-resistance of 0.40Ω at 25°C. The device supports a peak pulsed drain current of ±33A and dissipates up to 53W with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is up to 2.4°C/W and junction to ambient is up to 70°C/W. It is RoHS compliant and features low on-resistance, ultra-fast switching, and ease of parallel operation. Gate threshold voltage ranges from 3V to 5V, and total gate charge is 22nC at 300V drain voltage.
R6511KNX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6511KNX |
| Product Name | 650V 11A TO-220FM, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 11000 milliamps |
| QG | 22 nC |
| PD | 53000 milliwatts |
